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Surface-barrier transistor
The surface-barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy-junction transistor and the earlier point-contact transistor. Like the modern Schottky transistor, it offered much higher speed than earlier transistors and used Metal-semiconductor junctions (instead of semiconductor–semiconductor junctions), but unlike the schottky transistor, both junctions were metal–semiconductor junctions.
==Production Process==
Philco used a patented process of applying two tiny electrochemical jet streams of liquid indium sulfate (electrolyte solution) on opposite sides of a thin strip of N-type germanium base material. This process would etch away and form circular well depressions on each side of the N-type germanium base material, until the germanium base material was ultra thin and having a thickness of approximately a few ten-thousandths of an inch. After the etching process was finished, the polarity applied to the electrolyte was reversed, resulting in metallic indium being electroplated into these etched circular well depressions, forming the transistor's emitter and collector electrodes.〔Wall Street Journal, Dec 04 1953, page 4, Article "Philco Claims Its Transistor Outperforms Others Now In Use"〕〔Electronics magazine, January 1954, Article "Electroplated Transistors Announced"〕 The Philco surface-barrier transistor was the world's first high-frequency transistor to be developed and was capable of obtaining frequencies up to 60 MHz.〔Proceeding of the IRE, Dec 1953, Author: W.E. Bradley – Philco Corp., Research Division, Volume 41 issue 12, pages 1702–1706〕
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